Proximity‐Induced Magnetism Enhancement Emerged in Chiral Magnet MnSi/Topological Insulator Bi2Se3 Bilayer. Issue 2 (16th December 2020)
- Record Type:
- Journal Article
- Title:
- Proximity‐Induced Magnetism Enhancement Emerged in Chiral Magnet MnSi/Topological Insulator Bi2Se3 Bilayer. Issue 2 (16th December 2020)
- Main Title:
- Proximity‐Induced Magnetism Enhancement Emerged in Chiral Magnet MnSi/Topological Insulator Bi2Se3 Bilayer
- Authors:
- Choi, Won‐Young
Jeon, Jae Ho
Bang, Hyun‐Woo
Yoo, Woosuk
Jerng, Sahng‐Kyoon
Chun, Seung‐Hyun
Lee, Sunghun
Jung, Myung‐Hwa - Abstract:
- Abstract: A proximity effect between magnetic materials and topological surface states can generate and modulate the localized spins without complicated material structures, but its origin is not clearly verified. MnSi single layer and MnSi/Bi2 Se3 bilayer on Al2 O3 (001) substrates are fabricated by magnetron co‐sputtering and molecular beam epitaxy systems, in which a large proximity effect between the chiral magnetic structure and the topological surface states is manifested. The magnetic and electronic properties of both samples are meticulously compared and the proximity‐induced magnetism enhancement in the MnSi/Bi2 Se3 bilayer is found. Interestingly, this effect persists up to temperatures above 300 K. Furthermore, for the MnSi/Bi2 Se3 bilayer, the increase of charge carrier density and the decrease of carrier mobility near the Curie temperature T C = 40 K are observed, which can mediate the ferromagnetic exchange interaction enhancing the magnetization. The finding provides insight into a new platform to consist of materials with distinct topological phases for future spintronic devices. Abstract : The bilayer of MnSi and Bi2 Se3 leads to a large magnetism enhancement even though Bi2 Se3 is a diamagnetic material. This is attributed to the magnetic proximity effect between the chiral magnetic structure and the topological surface states. The finding provides an insight into new platform to consist of the materials with distinct topological phases for futureAbstract: A proximity effect between magnetic materials and topological surface states can generate and modulate the localized spins without complicated material structures, but its origin is not clearly verified. MnSi single layer and MnSi/Bi2 Se3 bilayer on Al2 O3 (001) substrates are fabricated by magnetron co‐sputtering and molecular beam epitaxy systems, in which a large proximity effect between the chiral magnetic structure and the topological surface states is manifested. The magnetic and electronic properties of both samples are meticulously compared and the proximity‐induced magnetism enhancement in the MnSi/Bi2 Se3 bilayer is found. Interestingly, this effect persists up to temperatures above 300 K. Furthermore, for the MnSi/Bi2 Se3 bilayer, the increase of charge carrier density and the decrease of carrier mobility near the Curie temperature T C = 40 K are observed, which can mediate the ferromagnetic exchange interaction enhancing the magnetization. The finding provides insight into a new platform to consist of materials with distinct topological phases for future spintronic devices. Abstract : The bilayer of MnSi and Bi2 Se3 leads to a large magnetism enhancement even though Bi2 Se3 is a diamagnetic material. This is attributed to the magnetic proximity effect between the chiral magnetic structure and the topological surface states. The finding provides an insight into new platform to consist of the materials with distinct topological phases for future spintronic devices. … (more)
- Is Part Of:
- Advanced quantum technologies. Volume 4:Issue 2(2021)
- Journal:
- Advanced quantum technologies
- Issue:
- Volume 4:Issue 2(2021)
- Issue Display:
- Volume 4, Issue 2 (2021)
- Year:
- 2021
- Volume:
- 4
- Issue:
- 2
- Issue Sort Value:
- 2021-0004-0002-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2020-12-16
- Subjects:
- chiral magnetic structure -- magnetic proximity effect -- magnetism -- thin films -- topological insulators
Quantum theory -- Periodicals
Quantum computing -- Periodicals
Quantum chemistry -- Periodicals
Quantum electronics -- Periodicals
537.5 - Journal URLs:
- https://onlinelibrary.wiley.com/journal/25119044 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/qute.202000124 ↗
- Languages:
- English
- ISSNs:
- 2511-9044
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.925700
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 15714.xml