Cite
HARVARD Citation
Labrot, M. et al. (2016). Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation. ECS transactions. pp. 29-38. [Online].
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Labrot, M. et al. (2016). Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation. ECS transactions. pp. 29-38. [Online].