Cite
HARVARD Citation
Lu, C. et al. (2016). Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors. ECS transactions. pp. 51-58. [Online].
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Lu, C. et al. (2016). Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors. ECS transactions. pp. 51-58. [Online].