Cite
HARVARD Citation
Hashemi, P. et al. (2016). Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations. ECS transactions. pp. 39-50. [Online].
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Hashemi, P. et al. (2016). Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations. ECS transactions. pp. 39-50. [Online].