(Invited) The Effect of Germanium/Silicon Interface on Germanium Photonics. (18th August 2016)

• Record Type: Journal Article
• Authors: Kim, Daeik; Bao, Shuyu; Tan, Chuan Seng; Nam, Ju Hyung; Saraswat, K. C.; Nam, Donguk
• Is Part Of: ECS transactions. Volume 75:Number 8(2016)
• Page Start: 683
• Page End: 688
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07508.0683ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Germanium has been an important material in the field of group IV photonics and photonic-integrated circuits because of its superior optical properties over silicon such as high responsivity up to 1550 nm (C-band). Although the material quality of germanium plays an important role in improving the performance of germanium-based photonic devices, it has been a technical challenge to obtain a high-quality germanium layer on silicon due to large lattice mismatch between silicon and germanium. In this paper, we discuss the effect of germanium/silicon interface on germanium-based optical devices. We present a couple of approaches to obtain a high-quality germanium layer on a silicon platform. By using various characterization techniques including transmission electron microscopy, time-resolved photoluminescence and steady-state photoluminescence, we show that the minority carrier lifetime and light emitting efficiency can be significantly improved in our engineered germanium-on-silicon platforms.