(Invited) Integration of III/V Hetero-Structures By Selective Area Growth on Si for Nano- and Optoelectronics. (18th August 2016)

• Record Type: Journal Article
• Authors: Kunert, Bernardette; Guo, Weiming; Mols, Yves; Langer, Robert; Barla, Kathy
• Is Part Of: ECS transactions. Volume 75:Number 8(2016)
• Page Start: 409
• Page End: 419
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07508.0409ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Selective area growth by metal organic vapor phase epitaxy of III/V nano ridges on patterned (001) Si substrates was investigated applying different growth conditions. The deposition of mismatched III/V materials in narrow oxide trenches leads to an efficient defect trapping at the trench side walls whereas the growth out of the trenches allows for a clear ridge formation with increased III/V volume. The ridge evolution depends strongly on the chosen growth parameters as well as mask pattern. InGaAs/GaAs and InGaP/GaAs hetero-structures were integrated on box shaped GaAs nano ridges in order to realize first laser device structures for optoelectronics on 300 mm Si substrate.