(Invited) Photoluminescence Properties of ZnO Nanostructures Growth Vertically on Transparent and Conductive Al-Doped ZnO Substrates. (4th January 2017)

• Record Type: Journal Article
• Authors: LI, Chaoyang; Hou, Shengwen
• Is Part Of: ECS transactions. Volume 75:Number 45(2016)
• Page Start: 1
• Page End: 8
• Publication Date: 2017-01-04
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07545.0001ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : ZnO nanostructures were fabricated on transparent conductive Al-doped ZnO substrates by a novel multi-annealing process in which the reducing annealing and oxidization annealing were carried out in turn. As the result, the fabricated ZnO nanostructures were aligned vertically on the Al-doped ZnO film under the optimizing annealing parameters during both reduction and oxidization reactions. The photoluminescence properties of ZnO nanostructures were influenced significantly by the annealing processes. An intense blue-green emission while a suppressed UV emission was observed from obtained ZnO nanostructures, as well as the high transmittance over 65%. The growth mechanism of the ZnO nanostructures was revealed in detail.