(Invited) The Compact Models and Parameter Extraction for Thin Film Transistors. (18th August 2016)

• Record Type: Journal Article
• Authors: Shur, Michael
• Is Part Of: ECS transactions. Volume 75:Number 10(2016)
• Page Start: 171
• Page End: 178
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07510.0171ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The compact Thin Film Transistor (TFT) models should be suitable for the device characterization and parameter extraction and should account for the non-ideal effects including mobility dependence on the gate bias, self- heating, and effects of the series resistances and capacitances. The kink effects might become important in short channel devices. The unified and universal charge control models describe both the above and below threshold characteristics with one generalized charge control equation, have a good convergence and use a relatively small number of parameters. These models have been augmented with the contact models and AC transmission line models that account for the RC constants represented by the fractions of the channel resistances in series with the gate-to-channel distributive capacitances for reproducing the frequency dispersion. The non-linear properties of the TFT contacts have to be modeled. Such compact TFT models have been implemented in circuit simulators but they need further improvements with the emergence of new TFT materials systems.