(Invited) Self-Aligned Four-Terminal Low-Temperature Polycrystalline-Silicon Thin-Film Transistors on Glass Substrate Using Continuous-Wave Laser Lateral Crystallization. (18th August 2016)

• Record Type: Journal Article
• Authors: Hara, Akito; Ohsawa, Hiroki
• Is Part Of: ECS transactions. Volume 75:Number 10(2016)
• Page Start: 37
• Page End: 47
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07510.0037ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : To integrate circuits on a glass substrate, high-performance and low-power-dissipation low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) are indispensable. Fabrication of high-quality poly-Si film is one approach to enhance the on-current of LT poly-Si TFTs on a glass substrate. In this paper, we used continuous-wave laser lateral crystallization (CLC) to fabricate high-quality lateral large-grained poly-Si films on a glass substrate. To achieve low power dissipation, threshold voltage (Vth ) control technology is one tentative approach. To control the Vth of LT poly-Si TFTs, we fabricated four-terminal (4T) self-aligned embedded metal double-gate (E-MeDG) LT poly-Si TFTs using high-quality CLC poly-Si films. The 4T self-aligned E-MeDG CLC LT poly-Si TFTs showed excellent Vth controllability. By exploiting the high controllability of the 4T TFTs, E/D inverter and extended gate pH sensor were fabricated and successful operation with high performance was confirmed.