Cite
HARVARD Citation
Mudgal, T. et al. (2016). Investigation on the Gate Electrode Configuration of IGZO TFTs for Improved Channel Control and Suppression of Bias-Stress Induced Instability. ECS transactions. pp. 189-197. [Online].
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Mudgal, T. et al. (2016). Investigation on the Gate Electrode Configuration of IGZO TFTs for Improved Channel Control and Suppression of Bias-Stress Induced Instability. ECS transactions. pp. 189-197. [Online].