(Invited) A New Materials Concept for High Performance Organic Thin Film Transistors. (18th August 2016)

• Record Type: Journal Article
• Authors: Iino, Hiroaki; Kunii, Masafumi; Hanna, Jun-ichi
• Is Part Of: ECS transactions. Volume 75:Number 10(2016)
• Page Start: 69
• Page End: 75
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07510.0069ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We have established a new materials concept for organic field effect transistors (OFETs) solution-processed, i.e., utilization of highly ordered smectic liquid crystals, which exhibit self-organization and solid-like nature, in order to solve the problems such as film uniformity and thermal durability in small molecule OFET materials. 2-Phenyl-7-decyl-benzothieno[3, 2-b][1]benzothiophene (Ph-BTBT-10) exhibiting SmE phase was designed and synthesized to apply OFETs. Bottom-gate and bottom-contact OFETs fabricated with its polycrystalline thin films exhibited high mobility of over 10cm 2 /Vs with its small variation from device to device and high thermal durability up to 200 o C . In addition, we succeeded in operating the OFETs at a few volt with a low-dielectric gate insulator material of SiO2 .