Cite
HARVARD Citation
Guo, J. et al. (2016). (Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method. ECS transactions. pp. 163-168. [Online].
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Guo, J. et al. (2016). (Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method. ECS transactions. pp. 163-168. [Online].