The Novel Way to Inspection Technique for SiC Substrate by Applying Stress Effects. (23rd August 2016)

• Record Type: Journal Article
• Authors: Sakata, Yoshitaro; Terasaki, Nao; Nonaka, Kazuhiro
• Is Part Of: ECS transactions. Volume 75:Number 12(2016)
• Page Start: 139
• Page End: 144
• Publication Date: 2016-08-23
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07512.0139ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : A carrot defect under the surface of SiC substrate are detected non-destructively by applying the stress-induced light scattering method (SILSM), and the utility of SILSM will be evaluated as a novel inspection technique for SiC substrate. As the results, it was confirmed that the light scattering of the carrot defect decreased by bending stress effect. Comparing with the wave number distribution which measured by a laser Raman microcopy and the light scattering result, a wave number of decreasing light scattering area is different other areas. Thus it was forecasted a crystal lattice distortion can be monitoring with stress effect indirectly.