(Invited) Unseeded Growth of Poly-Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing. (18th August 2016)

• Record Type: Journal Article
• Authors: Horita, Masahiro; Takao, Toru; Nieda, Yoshiaki; Ishikawa, Yasuaki; Sasaki, Nobuo; Uraoka, Yukiharu
• Is Part Of: ECS transactions. Volume 75:Number 10(2016)
• Page Start: 87
• Page End: 94
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07510.0087ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We investigated unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-µm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 µm wide and ~10 µm long, where the maximum length was 20 µm. Crystallization process was discussed from dependence of the laser fluence on the crystal states of Ge stripes as well as temperature simulations.