Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications. (25th August 2016)

• Record Type: Journal Article
• Authors: Noll, Dennis; Schwalke, Udo
• Is Part Of: ECS transactions. Volume 75:Number 13(2016)
• Page Start: 11
• Page End: 16
• Publication Date: 2016-08-25
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07513.0011ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Enhancement of the extent of transfer-free few-layer graphene has been achieved by the introduction of an additional solid carbon source into our silicon-CMOS compatible hydrocarbon CCVD process (1). A fivefold increase of graphene surface coverage is demonstrated by electrical testing of field-effect transistors showing typical few-layer graphene characteristics as have been reported elsewhere (2)(3). Full functionality has been achieved up to a channel length of 10µm. Furthermore, contact-mode conductive atomic force microscopy has been performed, confirming the presence of a conductive surface in the absence of other carbon allotropes like CNTs. However, microscopic electric defects can be seen on this surface. Finally, basic gas sensing properties of a graphene field-effect transistor are presented.