Deep Trap Levels Responsible for Current Collapse in AlGaN/GaN MISHFET. (23rd August 2016)

• Record Type: Journal Article
• Authors: Seol, Jeong-hoon; Kang, Hee-Sung; Lee, Gil-Ho; Lee, Jung-Hee; Hahm, Sung-Ho
• Is Part Of: ECS transactions. Volume 75:Number 12(2016)
• Page Start: 131
• Page End: 137
• Publication Date: 2016-08-23
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07512.0131ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We investigated the current collapse in AlGaN/GaN MISHFETs after negative gate bias by observing the spectral photo-responsive drain current. The photons of 2.25 eV were the most effective photon energy to excite the electrons trapped by the deep levels, and the energy was attributed to the current collapse induced by the negative gate bias. This trap deep energy might be related to the Ga vacancy in GaN bulk layer. The current collapse in AlGaN/GaN MISHFET was more significant for the wider gate-drain spacing.