Cite
HARVARD Citation
Nipoti, R. et al. (2016). (Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950°C Temperature for Post Implantation Annealing. ECS transactions. pp. 171-181. [Online].
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Nipoti, R. et al. (2016). (Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950°C Temperature for Post Implantation Annealing. ECS transactions. pp. 171-181. [Online].