Interfacial Transitional Layer in SiO2 Film Thermally Grown on SiC(000-1). (23rd August 2016)

• Record Type: Journal Article
• Authors: Nagai, Ryu; Iitsuka, Nozomu; Ozawa, Kodai; Hasunuma, Ryu; Yamabe, Kikuo
• Is Part Of: ECS transactions. Volume 75:Number 12(2016)
• Page Start: 123
• Page End: 129
• Publication Date: 2016-08-23
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07512.0123ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The uniformity of SiO2 film thermally grown on 4H-SiC was characterized by atomic force microscopic observation of the emerged SiO2 surface after each step-etching using diluted HF solution. It was found that roughness of the emerged SiO2 surface drastically increases near the SiO2 /SiC interface. This means that the film quality near the interface is not two-dimensionally uniform. We described the two-dimensionally non-uniform. On the other hand, the amount of roughness increase at the middle region was small, indicating the middle region is uniform film. These results indicate that the region is two-dimensionally uniform. These results indicate that the oxide film contains non-uniformly when just after being formed, and then the two-dimensional film uniformity is gradually improved during subsequent oxidation. Density profiles of SiO2 films were also characterized. The uniformity improvement was discussed in terms of impurity desorption and film density.