(Invited) Challenges for Ion Implantation in Power Device Processing. (26th April 2017)

• Record Type: Journal Article
• Authors: Schustereder, Werner
• Is Part Of: ECS transactions. Volume 77:Number 5(2017)
• Page Start: 31
• Page End: 42
• Publication Date: 2017-04-26
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07705.0031ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Ion Implantation processes contribute significantly to the development of power devices. Typically not smallest scale technologies are addressed, however accurate treatment of the frontside, backside and sometimes even bulk material play a crucial role to guarantee for key parameters such as highest power densities, minimal energy dissipation and required switching behavior at the same time. Some representative examples of the development needs of power device technologies based on silicon are described and challenges for ion implantation processing are concluded. Semiconductor materials like SiC and GaN obtain superior material characteristics compared to silicon and are therefore about to get of economic importance in the near future. Considerable development effort is put into the understanding of how to fabricate devices based on those materials. One ingredient is the knowledge how ion implantation can affect and tailor their semiconductor properties in a suitable manner.