The Virtual Diode with Electrostatic Doping. (26th April 2017)

• Record Type: Journal Article
• Authors: Lee, K.; Bawedin, Maryline; Parihar, M.; Park, H.-J.; Cristoloveanu, Sorin
• Is Part Of: ECS transactions. Volume 77:Number 5(2017)
• Page Start: 191
• Page End: 196
• Publication Date: 2017-04-26
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07705.0191ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : P-N diodes can be emulated in undoped SOI films by appropriately biasing the front and back gates. Systematic I-V characteristics are presented showing similarities with those of standard diodes with ion-implanted doping. There are also clear differences originated from the intrinsic properties of the electrostatic doping: (i) adjustable concentrations of electrons and holes, (ii) dynamic variation with anode voltage, (iii) 2D shape of the space charge region. Experimental results together with numerical simulations demonstrate the exceptional flexibility of the virtual diode for material characterization and design of reconfigurable circuits.