Cite
HARVARD Citation
Loo, R. et al. (2017). (Invited) Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. ECS transactions. pp. 241-252. [Online].
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Loo, R. et al. (2017). (Invited) Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. ECS transactions. pp. 241-252. [Online].