(Invited) Sequential 3D Process Integration: Opportunities for Low Temperature Processing. (1st August 2017)

• Record Type: Journal Article
• Authors: Kerdilès, Sébastien; Acosta-Alba, Pablo; Mathieu, Benoit; Veillerot, Marc; Denis, Hervé; Aussenac, François; Mazzamuto, Fulvio; Toque-Tresonne, Inès; Huet, Karim; Samson, Marie-Pierre; Previtali, Bernard; Brunet, Laurent; Batude, Perrine; Fenouillet-Beranger, Claire
• Is Part Of: ECS transactions. Volume 80:Number 4(2017)
• Page Start: 215
• Page End: 225
• Publication Date: 2017-08-01
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08004.0215ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : 3D sequential integration motivates the development of low temperature technological modules. Alternatively to classical non-selective annealing techniques, sub-microsecond laser annealing allows high temperature treatment of a sub-micrometer surface region while keeping the underneath structures at much lower temperature. In this contribution, we present recent advances in ultra-violet nanosecond laser annealing targeting monolithic 3D integration. Emphasis will be put on the demonstration of dopant activation in thin implanted SOI structures, simulating source and drain regions. Cu / ULK interconnects stability upon nanosecond laser annealing is also investigated.