(Invited) Thermal Stability of 1×1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C. (17th August 2017)
- Record Type:
- Journal Article
- Title:
- (Invited) Thermal Stability of 1×1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C. (17th August 2017)
- Main Title:
- (Invited) Thermal Stability of 1×1020 cm-3 Al+ Implanted 4H-SiC after Electrical Activation at Temperature ≥ 1850°C
- Authors:
- Nipoti, Roberta
Canino, Mariaconcetta
Puzzanghera, Maurizio
Sozzi, Giovanna - Abstract:
- Abstract : The effect of a 1500 °C treatment on 1×10 20 cm -3 Al + ion implanted in 4H-SiC samples that have been previously annealed at 1850-1950 °C is studied in this work. Up to 240 min annealing time at 1500 °C, the Al electrical activation reached at 1850-1950 °C is preserved.
- Is Part Of:
- ECS transactions. Volume 80:Number 7(2017)
- Journal:
- ECS transactions
- Issue:
- Volume 80:Number 7(2017)
- Issue Display:
- Volume 80, Issue 7 (2017)
- Year:
- 2017
- Volume:
- 80
- Issue:
- 7
- Issue Sort Value:
- 2017-0080-0007-0000
- Page Start:
- 101
- Page End:
- 105
- Publication Date:
- 2017-08-17
- Subjects:
- Electrochemistry -- Periodicals
Electrochemistry
Periodicals
Electronic journals
Electronic journal
541.37 - Journal URLs:
- http://ecsdl.org/ECST/ ↗
http://rzblx1.uni-regensburg.de/ezeit/warpto.phtml?colors=7&jour_id=81944 ↗
https://iopscience.iop.org/journal/1938-5862 ↗
http://www.electrochem.org/ ↗ - DOI:
- 10.1149/08007.0101ecst ↗
- Languages:
- English
- ISSNs:
- 1938-5862
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 15672.xml