(Invited) Transition Metal Dichalcogenide Semiconductor Growth and Large Area Devices for Optoelectronics and Sensing. (17th August 2017)

• Record Type: Journal Article
• Authors: Garg, Sourav; Mollah, Abu Shahab; Waters, Joseph L; Kim, Seongsin M; Kung, Patrick
• Is Part Of: ECS transactions. Volume 80:Number 6(2017)
• Page Start: 1
• Page End: 11
• Publication Date: 2017-08-17
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08006.0001ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Atomically-thin transition metal dichalcogenides, such as MoS2, are topological materials with physical characteristics of great interest for the realization of nano-electronic and photonic devices, with promising applications for chemical and biological sensing. We first report here the growth and characterization of continuous monolayer MoS2 films over large areas by chemical vapor deposition on both sapphire and silicon substrates. The effects of growth temperature were studied. The materials were subsequently characterized using Raman spectroscopy, photoluminescence, fluorescence imaging, optical absorption, atomic force microscopy, and electron microscopy. Large area metal-2D semiconductor-metal photodetector and gas sensor devices were then realized by conventional photolithography using an interdigitated pattern. The gas sensor was able to detect CO2 concentrations as low as 200 ppm, while the photodetector exhibited a detectivity of ~8x10 11 Jones at room temperature.