(Invited) New Directions in GaN Photonics Enabled by Electrochemical Processes. (25th April 2016)

• Record Type: Journal Article
• Authors: Zhang, Cheng; Yuan, Ge; Xiong, Kanglin; Park, Sung Hyun; Han, Jung
• Is Part Of: ECS transactions. Volume 72:Number 5(2016)
• Page Start: 47
• Page End: 56
• Publication Date: 2016-04-25
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07205.0047ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We have developed a novel conductivity based selective electrochemical etching to introduce nanometer sized pores into GaN. The nanoporous (NP) GaN can be considered as a new form of GaN with an unprecedented tunability in optical index. The advantages of NP-GaN for both edge-emitting laser diodes and vertical surface-emitting laser diodes (VCSEL) are subsequently exhibited.