(Invited) TmSiO as a CMOS-Compatible High-k Dielectric. (4th May 2016)

• Record Type: Journal Article
• Authors: Dentoni Litta, Eugenio; Hellström, Per-Erik; Östling, Mikael
• Is Part Of: ECS transactions. Volume 72:Number 4(2016)
• Page Start: 79
• Page End: 89
• Publication Date: 2016-05-04
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07204.0079ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Novel materials are being aggressively researched for integration in high-k/metal gate CMOS technology, as innovations in the gate stacks are necessary to sustain scaling toward the end of the roadmap. In this paper, we discuss thulium silicate as a candidate dielectric for integration as interfacial layer, focusing on compatibility with the requirements in terms of both process integration and effects on electrical device characteristics. In particular, we demonstrate that thulium silicate provides advantages over conventional chemical oxide interfacial layers in terms of scalability and channel mobility.