(Invited) CMOS Compatible High Performance IIIV Devices: Opportunities and Challenges. (4th May 2016)

• Record Type: Journal Article
• Authors: Sun, Yanning; Shiu, Kuen-Ting; Cheng, Cheng-Wei; Majumdar, Amlan; Bruce, Robert; Yau, Jeng-bang; Farmer, Damon; Zhu, Yu; Hopstaken, Marinus; Frank, Martin M.; Ando, Takashi; Lee, Ko-tao; Rozen, John; Sadana, Devendra K.; Narayanan, Vijay; Mo, Renee T.; Leobandung, Effendi
• Is Part Of: ECS transactions. Volume 72:Number 4(2016)
• Page Start: 313
• Page End: 319
• Publication Date: 2016-05-04
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07204.0313ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Self-aligned InGaAs channel MOSFET has been demonstrated on both InP and Si substrate using CMOS compatible device structure and process flow. Peak transconductance GMSAT over 2200 μS/μm has been achieved, at L EFF = 30 nm and supply voltage V DD = 0.5 V. These processes and devices are well-suited for future generations of high-performance CMOS applications at short gate lengths and tight gate pitches.