(Invited) Comprehensive Assessment of Oxide Memristors As Post-CMOS Memory and Logic Devices. (25th April 2016)

• Record Type: Journal Article
• Authors: Gao, Xujiao; Mamaluy, Denis; Cyr, Eric C.; Marinella, Matthew J.
• Is Part Of: ECS transactions. Volume 72:Number 3(2016)
• Page Start: 49
• Page End: 58
• Publication Date: 2016-04-25
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07203.0049ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : As CMOS technology approaches the end of its scaling, oxide-based memristors have become one of the leading candidates for post-CMOS memory and logic devices. To facilitate the understanding of physical switching mechanisms and accelerate experimental development of memristors, we have developed a three-dimensional fully-coupled electrical and thermal transport model, which captures all the important processes that drive memristive switching and is applicable for simulating a wide range of memristors. The model is applied to simulate the RESET and SET switching in a 3D filamentary TaOx memristor. Extensive simulations show that the switching dynamics of the bipolar device is determined by thermally-activated field-dominant processes: with Joule heating, the raised temperature enables the movement of oxygen vacancies, and the field drift dominates the overall motion of vacancies. Simulated current-voltage hysteresis and device resistance profiles as a function of time and voltage during RESET and SET switching show good agreement with experimental measurement.