Cite
HARVARD Citation
Lin, W. et al. (2018). AlGaN/GaN High Electron Mobility Transistors with a p-GaN Backgate Structure. ECS transactions. pp. 49-52. [Online].
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Lin, W. et al. (2018). AlGaN/GaN High Electron Mobility Transistors with a p-GaN Backgate Structure. ECS transactions. pp. 49-52. [Online].