(Invited) Current Status and Trends in RF Silicon-on-Insulator Material and Device. (10th April 2018)

• Record Type: Journal Article
• Authors: Raskin, Jean-Pierre
• Is Part Of: ECS transactions. Volume 85:Number 8(2018)
• Page Start: 47
• Page End: 57
• Publication Date: 2018-04-10
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08508.0047ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Radio Frequency (RF) Silicon-on-Insulator (SOI) is today a mainstream technology for several front-end module integrated circuits. The high quality of the trap-rich SOI substrate in terms of low insertion loss and high linearity is at the origin of its commercial success. Partially depleted SOI transistors characterized with a channel length from 180 nm down to 45 nm are currently manufactured on top of the trap-rich substrate. However, there is a growing interest for moving from partially to fully depleted SOI transistors in order to improve the RF and millimeter-waves performance of the transistor at low power consumption. On-going research explores the possibility of combining the best of the digital FD SOI devices and high quality RF SOI substrate to design low power mixed-mode communication system-on-chip.