Ultra-High Sensitivity for Lead Ion Detection Beyond the Ideal Nernst Response with AlGaN/GaN High Electron Mobility Transistors (HEMTs). (21st March 2018)

• Record Type: Journal Article
• Authors: Hsieh, Ching-Yen; Chen, Yi-Ting; Sukesan, Revathi; Wang, Yu-Lin
• Is Part Of: ECS transactions. Volume 85:Number 9(2018)
• Page Start: 3
• Page End: 8
• Publication Date: 2018-03-21
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08509.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The desirable features of mobile heavy metal detecting include rapid, convenience testing with minimal usage protocols, yet reliable results in a short span of time. Our research has unraveled a novel sensing methodology for FET based heavy metal sensor that enable detection of lead ions in water with ultra-high sensitivity and low detection limit. The sensor is packaged into disposable micro-SD card chips, making it easy to be integrated into a portable or handheld detecting system, which is accessible and affordable to all. The current technology can revolutionize the heavy metal detecting market.