(Invited) Oxide TFT Fabrication with Various Low Temperature Techniques. (23rd July 2018)

• Record Type: Journal Article
• Authors: Hong, Seonghwan; Kim, Hee Jun; Lee, I Sak; Kim, Hyung Tae; Kim, Hyun Jae
• Is Part Of: ECS transactions. Volume 86:Number 11(2018)
• Page Start: 95
• Page End: 104
• Publication Date: 2018-07-23
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08611.0095ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We propose various researches to lower processing temperature in oxide thin film transistors (TFTs): photocatalytic reactions of titanium dioxide (PRT) and rotating magnetic field (RMF) treatment. PRT utilizes hydroxyl radical-assisted decomposition. It can be generated by UV irradiation on titanium dioxide (TiO2 ) and water molecules in precursor solution. RMF uses magnetic interactions between metal and oxygen atoms. In addition, we suggest ethyl cyanoacrylate (ECA) based instant glue (IG) as a new material for passivation layers of oxide TFTs with low processing temperature.