N- and P- type Doping in Al-rich AlGaN and AlN. (23rd July 2018)

• Record Type: Journal Article
• Authors: Sarkar, Biplab; Washiyama, Shun; Breckenridge, M. Hayden; Klump, Andrew; Baker, Jonathon N.; Reddy, Pramod; Tweedie, James; Mita, Seiji; Kirste, Ronny; Irving, Doug L.; Collazo, Ramon; Sitar, Zlatko
• Is Part Of: ECS transactions. Volume 86:Number 12(2018)
• Page Start: 25
• Page End: 30
• Publication Date: 2018-07-23
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08612.0025ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Attaining a high conductivity in both p-type and n-type Al-rich AlGaN epitaxial films is necessary for highly efficient deep-UV emitters. While reliable n-type conductivity has been demonstrated in Alx Ga1-x N up to x < 0.8, achieving a reasonable p-type conductivity is a challenge even in Ga-rich AlGaN films. As one increases the x in Alx Ga1-x N, several point defects and charge compensators appear in the epitaxial film. This report reviews recent observations on doping, conductivity, point defect control of Al-rich AlGaN films. Discussions on activation energy, state-of-the-art epitaxial material quality, contact formation and surface treatments are also presented.