Advanced Millisecond Annealing Approaches for High-k Metal Gate and Contact Scaling. (20th July 2018)

• Record Type: Journal Article
• Authors: Sharma, Shashank; Chen, Jaujiun; Ng, Ben; McIntosh, Robert C; Muthukrishnan, Shankar; Raman Sharma, Karthik; Graoui, Houda; Mayur, Abhilash
• Is Part Of: ECS transactions. Volume 86:Number 2(2018)
• Page Start: 3
• Page End: 10
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08602.0003ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Semiconductor device scaling has necessitated introduction of new materials, device integration, and geometries. Continued device scaling thus requires innovations in unit processes and equipment. Thermal processing plays a key role in semiconductor device fabrication with a direct effect on thermodynamics and kinetics. In this paper, we present process and equipment innovations made in millisecond annealing that enable high-k metal gate and source-drain contact scaling in advanced logic devices. We demonstrate nitridation of high-k metal gate film stack with precise control over Nitrogen dose and placement in the film stack. We also demonstrate that improving the anneal system ambient O2 level during silicidation anneal significantly reduces barrier TiN oxidation that enables transition of contact metal fill from Tungsten to Cobalt.