(Invited) Issues with n-type Dopants in Germanium. (23rd July 2018)

• Record Type: Journal Article
• Authors: Skarlatos, Dimitrios; Ioannou-Sougleridis, Vassilios; Barozzi, Mario; Pepponi, Giancarlo; Vouroutzis, Nikolaos Zisis; Velessiotis, Dimitrios; Stoemenos, John; Zographos, Nikolas; Colombeau, Benjamin P
• Is Part Of: ECS transactions. Volume 86:Number 10(2018)
• Page Start: 51
• Page End: 58
• Publication Date: 2018-07-23
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08610.0051ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The last decade has seen considerable experimental and theoretical work towards the use of germanium for high-speed low-power electronics. Despite the demonstration of high performance p-channel Ge transistors in planar and non-planar device technology, fabrication of n-channel Ge transistors faces a number of scientific and technological challenges, which hinder the development of CMOS logic circuits based entirely on Ge. Major challenge constitutes the control of fast n-type dopant (out-/in-)diffusion in Ge, which prevents the formation of ultra-shallow and highly activated n + /p junctions necessary for n-channel Ge MOSFET's enhanced performance. The paper focuses on parameters affecting n-type dopant diffusion in Ge and the attempts to suppress it, with particular emphasis on the action of nitrogen as phosphorous diffusion blocker.