(Invited) Heterogeneous Integration of III-V Semiconductors on Si Photonics Platform. (20th July 2018)

• Record Type: Journal Article
• Authors: Hiraki, Tatsurou; Aihara, Takuma; Hasebe, Koichi; Fujii, Takuro; Takeda, Koji; Nishi, Hidetaka; Kakitsuka, Takaaki; Fukuda, Hiroshi; Tsuchizawa, Tai; Matsuo, Shinji
• Is Part Of: ECS transactions. Volume 86:Number 7(2018)
• Page Start: 11
• Page End: 16
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08607.0011ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : This paper reviews development of heterogeneously integrated photonic devices on a Si platform for optical transceivers. III-V/Si laser diodes and Mach-Zehnder modulators can be fabricated using a direct wafer bonding method and show 4.6-mW output power and a VπL of 0.09 Vcm on silicon-on-insulator wafers. In addition, moderate refractive-index SiOx and SiOxNy waveguides can be fabricated with a low-temperature backend process; they have a low-crosstalk (< -27 dB) and can be used to make polarization-insensitive wavelength filters on the Si platform.