Strain Evaluation of Laser-Annealed SiGe Thin Layers. (20th July 2018)

• Record Type: Journal Article
• Authors: Komago, Shota; Murakami, Tatsumi; Yoshioka, Kazutoshi; Yokogawa, Ryo; Borland, John O; Kuroi, Takashi; Tabata, Toshiyuki; Huet, Karim; Horiguchi, Naoto; Ogura, Atsushi
• Is Part Of: ECS transactions. Volume 86:Number 7(2018)
• Page Start: 59
• Page End: 65
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08607.0059ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : SiGe channel is widely used because carrier mobilities of SiGe arehigher than those of Si. C or Ge ion implantation in the source/drainregion is expected to be effective to induce tensile or compressivestrain, respectively, in the SiGe channel. Laser annealing enables toremove lattice damage efficiently with minimum thermal budget. Inthis study, laser-annealed SiGe thin layers with and without C or Geimplantation were evaluated by Raman spectroscopy and X-rayPhotoelectron Spectroscopy (XPS). We demonstrated the effect ofC or Ge implantation as well as Ge redistribution by the laserannealing on the Raman peak shift.