(Invited) High-Sn Concentration MOCVD-Grown Strained GeSn Thin Films Evaluated Using HAXPES and XRD Base on Synchrotron Technique. (20th July 2018)

• Record Type: Journal Article
• Authors: Usuda, Koji; Yoshiki, Masahiko; Suda, Kohei; Ogura, Atsushi; Tomita, Mitsuhiro
• Is Part Of: ECS transactions. Volume 86:Number 7(2018)
• Page Start: 411
• Page End: 418
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08607.0411ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We demonstrate a GeSn growth method that uses new source gases to increase the Sn concentration of GeSn thin films, which are attracting attention as a next-generation semiconductor material for replacing for Si. Synchrotron radiation techniques are very useful for physical analysis of ultrathin films, particularly hard X-ray photoelectron spectroscopy, which can simultaneously analyze the outermost surface of the thin film and the bulk GeSn just underneath. As a result, we obtained results suggesting the growth of a high-quality GeSn thin film with suppression of surface Sn segregation and surface oxidation. Analysis of Sn concentration using a combination of Rutherford backscattering spectroscopy and secondary ion mass spectrometry revealed that the concentration of Sn was about 6.6 atom % and that the Sn content was uniform in the depth direction. These synchrotron techniques are expected to facilitate the preparation of high-quality, high-Sn GeSn thin films.