(Invited) Understanding Interfaces in Homoepitaxial GaN Growth. (20th July 2018)

• Record Type: Journal Article
• Authors: Hite, Jennifer K.; Mastro, Michael A; Luna, Lunet E; Anderson, Travis J.
• Is Part Of: ECS transactions. Volume 86:Number 9(2018)
• Page Start: 15
• Page End: 19
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08609.0015ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Homoepitaxial growth of GaN yields significantly higher quality material and, thus, expands the application space for commercially competitive III-nitride based devices. A critical aspect in controlling homoepitaxial growth consists of understanding impurity incorporation at the interface of GaN grown on GaN. This paper investigates the source of impurity incorporation at the regrowth interface for a MOCVD process and the associated effects on lateral high-electron mobility transistor device structures.