Cite
HARVARD Citation
Teng, N. et al. (2019). An Ion-Sensitive Field-Effect Transistor with Three-Dimensional Extended-Gate Architecture. ECS transactions. pp. 81-86. [Online].
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Teng, N. et al. (2019). An Ion-Sensitive Field-Effect Transistor with Three-Dimensional Extended-Gate Architecture. ECS transactions. pp. 81-86. [Online].