Nanoscale Wet Chemical Engineering of III-V Quantum Dots for Emerging Solar Applications. (8th April 2019)

• Record Type: Journal Article
• Authors: Bouttemy, Muriel; Aureau, Damien; Frégnaux, Mathieu; Shoji, Yasushi; Jehl, Zacharie; Suchet, Daniel; Guillemoles, Jean François; Etcheberry, Arnaud; Okada, Yoshitaka
• Is Part Of: ECS transactions. Volume 89:Number 4(2019)
• Page Start: 37
• Page End: 46
• Publication Date: 2019-04-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08904.0037ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Multi-junction solar cells architectures have gained interest among the photovoltaic community, as they are very promising architectures for high efficiency devices. Among the different configuration envisaged, the use of III-V materials has yet proved to be relevant. More especially, recent studies have shown that the implementation of quantum dots on the surface of a III-V layer leads to the generation of an intermediate band with the benefit to reach efficiencies around 48%. Two issues are considered: the elimination of the wetting layer detrimental for optoelectronic properties and then the control of the quantum dots shape and chemistry to adjust the band-gap. Wet chemistry is a conventional strategy used for III-V material surface engineering. In the present case, specific formulations and protocols are developed to fulfill the nanometric dimension considerations and take account for specificities of this 1 or 0-Dimension like structuration, on the base of surface analyses expertise.