Cite
HARVARD Citation
Nabatame, T. et al. (2019). (Invited) Characteristics of Several High-k Gate Insulators for GaN Power Device. ECS transactions. pp. 109-117. [Online].
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Nabatame, T. et al. (2019). (Invited) Characteristics of Several High-k Gate Insulators for GaN Power Device. ECS transactions. pp. 109-117. [Online].