Anisotropic Biaxial Strain Evaluation in Carbon-Doped Silicon Using Water-Immersion Raman Spectroscopy. (3rd July 2019)

• Record Type: Journal Article
• Authors: Yoshioka, Kazutoshi; Yokogawa, Ryo; Sawamoto, Naomi; Ogura, Atsushi
• Is Part Of: ECS transactions. Volume 92:Number 4(2019)
• Page Start: 33
• Page End: 39
• Publication Date: 2019-07-03
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09204.0033ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Carbon-doped silicon (Si:C) is used in the source and drain region as a stressor to the channel of n-type metal oxide semiconductor field-effect-transistor (MOSFET). In this study, we evaluated the anisotropic biaxial strain of the patterned Si:C modeled for actual devices using water-immersion Raman spectroscopy. As a result, it was confirmed that the tensile strain and stress applied to the Si:C film was relaxed by nano-fabrication. Furthermore, it was found that the stress relaxation state differed depending on the C concentration.