(Invited) Ag Sinter Joining Technology for Different Metal Interface (Au, Ag, Ni, Cu, Al) in Wide Band Gap Power Modules. (3rd July 2019)

• Record Type: Journal Article
• Authors: Chen, Chuantong; Suganuma, Katsuaki
• Is Part Of: ECS transactions. Volume 92:Number 7(2019)
• Page Start: 147
• Page End: 153
• Publication Date: 2019-07-03
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09207.0147ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Ag sinter joining as a promising alternative die attach material have received more and more attention for next generation wide band gap (WBG) power modules. Here we report a robust joint by Ag sinter joining technology for different metal interface (Au, Ag, Ni, Cu, Al) in WBG power modules. Micron-scale Ag flakes were used as the Ag fillers. Sinter Ag joint for different metal interface was implemented by a sintering process under temperatures of 250 °C in air without pressure. The die shear strength of all the joint structures was larger than 25 MPa and the sinter Ag on the Ag metallized substrate shows the maximum value about 40 MPa. The die shear strength was larger than the value of traditional Sn–Pb solders (19~24MPa). Bonding mechanism for Ag sinter joining for different metal interface also was analyzed by SEM, EDS, and TEM observation. This study will add to the understanding of Ag sinter joining and expand its application in various power electric device interconnects.