(Invited) 3D Passive Devices and Through-Substrate Connections for Medical and Automotive Applications. (3rd July 2019)

• Record Type: Journal Article
• Authors: Bunel, Catherine; Lefeuvre, E; Jacqueline, S; Jatlaoui, M
• Is Part Of: ECS transactions. Volume 92:Number 5(2019)
• Page Start: 1
• Page End: 7
• Publication Date: 2019-07-03
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09205.0001ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Murata has developed a unique technology in silicon for capacitors and interposers with integrated passive devices. The research was focused on advanced concepts with 3D trenches with extremely high aspect ratio and exquisite high-k dielectrics to obtain the highest capacitor density with excessive reliability. The technology is compliant with strong capability in terms of packaging enabling outstanding performance of miniaturized products and heterogeneous solutions. This paper outlines two stacking technologies: one in medical where the performance and form factor parameters are becoming increasingly important and the other one is in automotive where higher computing performance will be entailed. Both are subject to demanding requirements in terms of reliability. The 3D integration schemes, one that does not rely on traditional methods of interconnect and the other with Through Silicon Vias (TSVs), will be depicted in addition to the manufacturing processes. The technical challenges and the industrial constraints of these two configurations will be discussed.