Voided Ge/Si Platform to Integrate III-V Materials on Si. (22nd October 2019)

• Record Type: Journal Article
• Authors: Bioud, Youcef Ataellah; Boucherif, Abderraouf; Myronov, Maksym; Patriarche, Gilles; Drouin, Dominique; Arès, Richard
• Is Part Of: ECS transactions. Volume 93:Number 1(2019)
• Page Start: 81
• Page End: 85
• Publication Date: 2019-10-22
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09301.0081ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : High-quality germanium epilayers on Si with low threading-dislocation densities were achieved by self-assembling nanovoids inside the Ge layer. This consists on the formation of porous Ge nanostructures by dislocation-selective electro-chemical etching followed by high-temperature treatment to transform it into quasi-monocrystalline voided Ge layer, which intercept dislocations and prevent them from reaching the upper layer.