N-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. (22nd October 2019)

• Record Type: Journal Article
• Authors: Ciano, Chiara; Di Gaspare, Luciana; Montanari, Michele; Persichetti, Luca; Baldassarre, Leonetta; Ortolani, Michele; Capellini, Giovanni; Skibitzki, Oliver; Zöllner, Marvin; Faist, Jerome; Scalari, Giacomo; Stark, David; Paul, Douglas J; Rew, Kirsty; Moutanabbir, Oussama; Mukherjee, Samik; Grange, Thomas; Birner, Stefan; Virgilio, Michele; De Seta, Monica
• Is Part Of: ECS transactions. Volume 93:Number 1(2019)
• Page Start: 63
• Page End: 66
• Publication Date: 2019-10-22
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09301.0063ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Exploiting intersubband transitions in Ge/SiGe quantum cascade devices provides a way to integrate terahertz light emitters into silicon-based technology. With the view to realizing a Ge/SiGe Quantum Cascade Laser, we present the optical and structural properties of n-type strain-symmetrized Ge/SiGe asymmetric coupled quantum wells grown on Si(001) substrates by means of ultrahigh vacuum chemical vapor deposition. We demonstrate the high material quality of strain-symmetrized structures and heterointerfaces as well as control over the inter-well coupling and electron tunneling. Motivated by the promising results obtained on ACQWs, which are the basic building block of a cascade structure, we investigate, both experimentally and theoretically, a Ge/SiGe THz QCL design, optimized through a non-equilibrium Green's function formalism.