Group IV Heteroepitaxy for Advanced Electronic Devices Integrated in BiCMOS Technology. (22nd October 2019)

• Record Type: Journal Article
• Authors: Yamamoto, Yuji; Rücker, Holger; Heinemann, Bernd; Lischke, Stefan; Baristiran Kaynak, Canan; Kaynak, Mehmet; Tillack, Bernd
• Is Part Of: ECS transactions. Volume 93:Number 1(2019)
• Page Start: 1
• Page End: 5
• Publication Date: 2019-10-22
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09301.0001ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : Epitaxy is a key process for group IV semiconductor device fabrication. For precisely-controlled fabrication of steep profiles for high performance devices, lowering the thermal budget of the epitaxy process is getting increasingly important. In this paper, we review group IV heteroepitaxy processes used at IHP and their application. In particular, we present SiGe HBT devices using low-temperature Si2 H6 based epitaxy process and discuss potential advantages compared to standard SiH4 based process. Additionally, we show a growth technique for high-quality Ge photodiodes with several cycles of annealing by interrupting the Ge growth (cyclic annealing) followed by HCl etching. Furthermore, we discuss the device performance of SiGe/Si multi-quantum well (MQW) microbolometers and a technique to improve the quality of SiGe/Si MQW structures by introducing C delta layer at interface.