Sn Nanodots-Induced Composition Enhancement (NICE) to Achieve 26 at. % Sn in GeSn for Mid-Infrared Integrated Photonics. (22nd October 2019)

• Record Type: Journal Article
• Authors: Cuervo Covian, Alejandra Vanessa; Zhou, Yiyin; Wang, Xiaoxin; Yu, Shui-Qing; Liu, Jifeng
• Is Part Of: ECS transactions. Volume 93:Number 1(2019)
• Page Start: 49
• Page End: 50
• Publication Date: 2019-10-22
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09301.0049ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We present a nanodot-induced compositionenhancement (NICE) approach for achieving high Sn composition GeSn. The approach involves the deposition of Sn dots (20-60nm in diameter) using physical vapor deposition (PVD) with a subsequent deposition of a Ge capping layer and crystallization annealing. Photoluminescence at λ=3-4 μm is demonstrated towards mid infrared photonic applications.