(Invited) A Novel Optical Characterization of a-Si:H/c-Si Interface Microstructures Based on Data of Positron Annihilation Spectroscopy. (3rd July 2019)

• Record Type: Journal Article
• Authors: Matsuki, Nobuyuki; Matsui, Takuya; Michishio, Koji; O' Rourke, Brian; Oshima, Nagayasu; Uedono, Akira
• Is Part Of: ECS transactions. Volume 92:Number 9(2019)
• Page Start: 21
• Page End: 24
• Publication Date: 2019-07-03
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09209.0021ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : The structure of microvoids formed in the hydrogenated amorphous silicon (a-Si:H) layer of a-Si:H/crystalline silicon heterojunction solar cells has been considered as an important key to determine photovoltaic performance. However, due to limitations in accurately measuring the microvoid structure in the nanometer-thick region, the size and distribution of the microvoids near the heterointerface have not yet been clarified. Here we demonstrate a new method of optical characterization with nm-thick sensitivity to investigate the microvoid structure realized based on experimental data of positron annihilation spectroscopy and spectroscopic ellipsometry.